Samsung's first 50-nanometer 16Gb NAND flash

Samsung Electronics announced its 16 gigabit (Gb) NAND flash memory which is the first NAND flash using 50 nanometer process technology. It has a multi-level cell (MLC) design with a 4KB page size to improve the read/write features. According to the company, they said that this new 4KB page features improves the conventional 2KB paging system for MLC NAND flash to double the read speed while increasing the write performance 150%. Samsung has planned to begin producing this 16GB NAND flash memory in the first quarter of 2007.
[via Aving]










